Abstract
Dependence of the lattice parameter of melt-grown ZnSe on Zn partial pressure have been measured by the Bond method. The lattice parameters changed between 0.566902 and 0.566908 nm depending on the partial pressure of Zn during growth. The minimum lattice parameter was observed at the Zn reservoir temperature of 1000°C, where the melt composition was near stoichiometry.
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