Abstract
A GaSb based homojunction interfacial work function internal photoemission far-infrared (>30μm) detector is presented. Metal-organic vapor phase epitaxy grown p-GaSb∕GaSb samples show 9.7A∕W peak responsivity and a peak detectivity of 5.7×1011 Jones with effective quantum efficiency of 33% at 36μm and 4.9K. The detector exhibits a 97μm (∼3THz) free carrier response threshold wavelength. Results indicate that p-GaSb homojunction internal work function internal photoemission detectors are promising candidates to be a competitor for terahertz applications.
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