Abstract
Heterojunction interfacial work function internal photoemission detectors were used to demonstrate infrared response originating from hole transitions between light/heavy hole bands and the split-off (spin-orbit) band. A GaAs∕AlGaAs heterojunction with a threshold wavelength of ∼20μm indicated an operating temperature of 130K for split-off response in the range of 1.5–5μm with a peak D* of 1.0×108 Jones. Analysis suggests that practical devices with optimized parameters are capable of achieving room temperature operation with higher specific detectivity. Possible approaches to tailor the threshold for the split-off response to different wavelength ranges using different materials such as phosphides and nitrides are also discussed.
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