Abstract
The mobility and reliability characteristics of submicron nMOSFETs with oxynitride gate dielectric of various oxide thicknesses (50, 80 and 120 Å), and oxidation temperatures (907, 957 and 1057°C) grown in a conventional furnace have been investigated. Oxynitride gate devices show higher mobility than that of control oxide devices under high normal field. The oxynitride devices exhibit much less degradation ( ΔG m/ G m and ΔV t) under channel hot-electron stress. Based on lifetime extrapolation, non-LDD MOSFETs using this new oxynitride dielectrics are predicted to have lifetime substantially longer than 10 years under 3.3 V operation.
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