Effects of high normal electric fields in deep submicron MOSFET's

Abstract

The implications of high normal electric fields in MOSFET's on device simulations are discussed. Comparison of simulations with data of experimental MOS devices shows that, even at room temperature, the electric fields generated by high levels of channel doping affect the threshold voltage by quantum-mechanical effects. Furthermore, the surface mobility is reduced by high normal fields, but can still be modeled accurately when calculated as a function of the effective electric field.