Abstract
An alternative technology is studied here to elaborate hybrid orientation silicon on insulator (SOI) films above a continuous buried oxide (BOX). To this purpose, a “deep-amorphization” followed by solid phase epitaxial regrowth (SPER) of SOI films is investigated. The effect of the deep-amorphization and SPER on p-type fully-depleted metal oxide semiconductor field effect transistors (FD-MOSFETs) electrical characteristics is presented and discussed for both (1 0 0) and (1 1 0) oriented SOI films. High performance pMOS were realized on (1 1 0) substrates. Our results show a +30% gain on the drive current for the (1 1 0) surface orientation, and we further demonstrate that no degradation of the performance is introduced by the amorphization and SPER processes.
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