Impact of channel width and dummy length on performance enhancement in p-type metal oxide semiconductor field effect transistor with a silicon-germanium alloy stressor

Abstract

The stress distribution in the Si channel regions of silicon-germanium (SiGe) source/drain p-type metal oxide semiconductor field effect transistor of various widths and dummy lengths was studied using ANSYS simulations. The drain current enhancement is dominated by the compressive stress along the transport direction. Stress perpendicular to the channel was found to have the least effect on the drain current in wide-width devices. However, this stress component cannot be neglected in narrower devices. The tensile stress along the vertical direction contributes to the drain current enhancement in wide devices but can be neglected when the width is very small. The impact of channel width and dummy length effects on improvements in device performance such as the drive current gain was also analyzed.