Abstract
Pure agar (PA)-based resistive random access memory (RRAM) devices using simple solution process method were demonstrated. The memory properties of the investigated PA-based resistive layers are determined by the relationship between the physical properties of the PA thin films and the RRAM performance. The memory properties of PA films with 2 different bottom substrates (glass and PET) and ITO as bottom electrodes were also investigated to explore the differences between rigid and flexible substrates. The RRAM fabricated from PA film and PET substrates exhibit good uniformity acceptable retention over 104 s, and high ON/OFF ratio (>104) at room temperature. According to the fitting results, the RRAM made of PA thin film conforms to the Space-charge-limited current model. This work helps to understand the resistive switching and maintain stable operations of Agar-based RRAM, which means a lot for increasing the application of agar in flexible devices.
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