Abstract
Ferroelectric properties of W-doped Bi 4Ti 3O 12 (W-BIT) thin film were investigated in comparison with those of undoped Bi 4Ti 3O 12 (BIT), which were prepared by sol–gel method and spin-coating technique. X-ray diffraction (XRD) measurements showed layered perovskite structures with a single phase in both films. The W-BIT film appeared to have superior ferroelectric properties to the undoped film prepared under the same conditions. The remanent polarization (2 P r) and the coercive field (2 E c) of the W-BIT film were 20 μC/cm 2 and 90 kV/cm, respectively, with a maximum applied field of 170 kV/cm. In addition, the W-BIT film showed a fatigue-free behavior up to 4.5×10 10 read/write cycles.
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