Abstract
One approach to tune the cathode power involves systematically investigating the effect of power variation on the crystal structure and surface. The regulation of toxic gas exposure is receiving more attention to control the release of harmful gases. In this study, V2O5 thin films were fabricated using the DC magnetron sputtering technique to detect the presence of DMA gas. The material properties of the samples were analyzed using XRD, FESEM, AFM and IV. A comparison was made between films deposited at different sputtering powers, specifically 75 W and 100 W. The film deposited at 100 W showed a good response regarding sensitivity on the calibration curve at room temperature, for a concentration range of 20 ppm to 100 ppm of DMA. Additionally, this study explains the gas sensing mechanism and proposes a practical method for constructing nanostructure-based chemical resistive gas sensors that provide rapid performance.
Published Version
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