Abstract
The pursuit of low-power/low-voltage operation in devices has prompted a keen interest in the mesoscale effects within ferroelectric thin films. The downsizing of ferroelectrics can significantly influence performance; for instance, the remanent polarization and coercive field are susceptible to alterations based on thickness. In this study, randomly oriented Bi3.25La0.75Ti3O12 thin films were fabricated on Pt/Ti/SiO2/Si substrates using the sol–gel method, and SEM observations revealed rod-like grains in all thin films. The investigation delved into the correlation between dielectric and ferroelectric properties with thin film thickness. The thin film exhibited an increased remanent polarization and a reduced coercive electric field. Additionally, the ferroelectric domain structure was scrutinized through PFM, and the resistor properties of the BLT4 thin film were studied, which shows the potential of BLT thin films in non-volatile memory and memristor.
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