Abstract
Abstract Sr 2 Bi 4 Ti 5 O 18 (SBTi) and Nd-modified SBTi (SBNT) thin films were deposited on Pt/Ti/SiO 2 /Si (1 0 0) substrates using a sol–gel method. Structure, morphology and electric properties were investigated systematically. These films were randomly oriented and composed of rod-like grains. The remanent polarization (2 P r ) and coercive field ( E c ) of SBNT films were 30 μ C/cm 2 and 55 kV/cm, respectively. This value of 2 P r was much higher than the reported value of SBTi prepared by pulsed-laser deposition. More importantly, the SBNT films showed high fatigue resistance against continuous switching up to 3×10 9 cycles and excellent charge-retaining ability up to 3×10 4 s.
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