Abstract
The effects of Nb doping on the ferroelectric properties of Bi4Ti3O12 (BIT) thin films were investigated. Ferroelectric Nb-doped Bi4Ti3O12 (BTN) thin films were prepared by a sol–gel spin-coating method and annealed at several temperatures in an oxygen atmosphere. From analyzing X-ray diffraction patterns, it could be determined that a randomly oriented film was obtained by doping Nb ion into BIT thin film. The BTN film consisted of more disordered plate-like grains whereas the plate-like grains in the BIT film were more parallel to the substrate. The remanent polarization (2Pr) and coercive field (2Ec) of the BTN thin film that annealed at 700°C were about 39.8μC/cm2 and 136.7kV/cm at a sweep electric field of 175kV/cm. The pulse polarization (Psw−Pns) and the shape of the hysteresis loops did not change significantly before and after the 1.5×1010 switching cycles.
Published Version
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