Abstract
AbstractIn this article, the electrical properties of 3C‐SiC are described and its potential for metal‐oxide semiconductor field‐effect transistors (MOSFETs) is demonstrated. The density of traps, DIT, at the interface of 3C‐SiC/SiO2 capacitors is determined by the conductance method subsequent to various processing steps; the origin of the interface traps is discussed. Lateral and vertical 3C‐SiC MOSFET devices of varying cell and device size are designed with hexagonal and squared cell geometry, and are fabricated side by side with MOS Hall bar structures. The electrical parameters of the MOSFETs are determined, and the free electron areal density and Hall mobility are measured in the channel of the MOS Hall bar structures. Based on the charge‐sheet model, DIT is also obtained from the Hall investigations.
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