Comparative hall measurements on wet- and dry-oxidized 4H-SiC MOSFETs

Abstract

Hall measurements have been used to compare the properties of 4H-SiC inversion-mode MOSFETs with "wet" and "dry" gate oxides. While the field-effect mobilities were approximately 3-5 cm2/Vs, the Hall mobilities in 4H-SiC MOSFETs in the wet and dry oxide samples were approximately 70-80 cm2/Vs. The dry-oxidized metal oxide semiconductor field effect transistors (MOSFETs) had a higher transconductance, improved threshold voltage, improved subthreshold slope, and a higher inversion carrier concentration compared to the wet-oxidized MOSFETs. The difference in characteristics between the wet- and the dry-oxidized MOSFETs is attributed to the larger fixed oxide charge in the dry oxide sample and a higher interface trap density in the wet oxide sample.