Abstract
This work addresses the thermal stability of bipolar resistive switching in yttrium oxide-based resistive random access memory revealed through the temperature dependence of the DC switching behavior. The operation voltages, current levels, and charge transport mechanisms are investigated at 25 °C, 85 °C, and 125 °C, and show overall good temperature immunity. The set and reset voltages, as well as the device resistance in both the high and low resistive states, are found to scale inversely with increasing temperatures. The Schottky-barrier height was observed to increase from approximately 1.02 eV at 25 °C to approximately 1.35 eV at 125 °C, an uncommon behavior explained by interface phenomena.
Highlights
N is called the electroforming process; otherwise, the high resistive state (HRS)-to-LRS transition is referred to as “set,” while the opposite process as “reset.” The biggest limitations that have to be overcome for Resistive Random Access Memory (RRAM) lie in device reliability and variability
Many possible mechanisms have been proposed for conduction in both resistive states,[9] partly due to the large variety of materials used as electrodes and functional layers in RRAM, highlighting the importance of appropriate material choice
Unlike other transition metal oxides exploited as the functional layer in RRAM, such as hafnium or tantalum oxide, for yttria the only stable stoichiometry is Y2O3.16 It has been shown that oxygen engineering of the functional layer in hafnia-based RRAM is beneficial in lowering the operation voltages due to a high oxygen vacancy density.[17,18]
Summary
N (initial CF formation) is called the electroforming process; otherwise, the HRS-to-LRS transition is referred to as “set,” while the opposite process as “reset.” The biggest limitations that have to be overcome for RRAM lie in device reliability and variability.
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