A Simplified Model for Resistive Switching of Oxide-Based Resistive Random Access Memory Devices

Yang Lu,Yihan Fu,Lifeng Liu,Bing Chen,Xiaoyan Liu,Jinfeng Kang,Bin Gao

doi:10.1109/led.2011.2178229

A Simplified Model for Resistive Switching of Oxide-Based Resistive Random Access Memory Devices

Yang Lu, Yihan Fu + Show 5 more

https://doi.org/10.1109/led.2011.2178229

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Journal: IEEE Electron Device Letters	Publication Date: Mar 1, 2012
Citations: 30

Affiliation: Peking University, Institute of Microelectronics

#Oxide-based Resistive Random Access Memory #Resistive Random Access Memory Devices + Show 8 more

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Abstract

A physical-based simplified model is presented to quantify the resistive switching behavior of oxide-based resistive random access memory (RRAM). In this model, the analytical expressions of the RESET time of RRAM devices and the correlated resistance in high-resistance states are presented and experimentally verified. Based on the extracted physical-based model parameters from measured data, the resistive switching characteristics of oxide-based RRAM devices can be evaluated.

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