Functional bipolar resistive switching in AlN/Ni–Mn–In based magnetoelectric heterostructure

Abstract

This report explores the influence of temperature on resistive switching characteristics in the AlN/Ni–Mn–In magnetoelectric (ME) heterostructure-based resistive random access memory (ReRAM) device. The fabricated Cu/AlN/Ni–Mn–In/Si device exhibits a sharp transition from a high resistance state (HRS) to low resistance state (LRS) at a SET voltage. The rupture of the filament from its weakest point at a RESET voltage turn the device back to its HRS. The stable bipolar resistive switching behavior is described by the current–voltage (I–V) characteristic. The HRS and LRS are explained by the trap-controlled space charge limited conduction mechanism and a well-known Ohmic conduction mechanism, respectively. The temperature-dependent resistance has been observed to further confirm the conduction mechanism in HRS and LRS. The current conduction in LRS is explained by an analytical model based on copper metallic filament formation via Cu+ migration from the top to the bottom electrode. A significant change in the SET voltage has been observed with the decrease in temperature. This variation in the SET voltage is explained via strain-mediated coupling in interfacially connected AlN/Ni–Mn–In ME heterostructure. The fabricated device displays an appreciable OFF/ON ratio of the order ∼3 × 103 with good endurance and retention of ∼1000 cycles and ∼900 s, respectively. A slight variation (<40%) in SET and RESET voltages has been observed for total endurance cycles. This study demonstrates the importance of ME heterostructure for futuristic tuneable ReRAM applications.