Electrons and holes in InSb under crossed magnetic and stress fields. III. Magnetoreflection.

Abstract

We have investigated the electronic interband transitions close to the band gap of InSb by observing magnetoreflectivity under uniaxial stress. The sensitivity of the experiment was increased by application of a magnetic-field-modulation technique. By this method we can resolve transitions from the conduction band to various valence-band Landau levels. The measurements were carried out with light polarized linearly along and perpendicular to the magnetic induction B (E?B and E\ensuremath{\perp}B). In addition to well-known electric dipole resonances we observed new transitions induced by stress. These additional lines are connected with transition matrix elements which arise from lowering the symmetry. The observed transition energies are compared with band-structure calculations.