Electrons and holes in InSb under crossed magnetic and stress fields. II. Recombination radiation.

Abstract

Stimulated recombination radiation and spin-flip Raman scattering have been observed in InSb with uniaxial stress T applied perpendicular to a magnetic field B (T?[100], B?[001]). A k\ensuremath{\cdot}p Hamiltonian was established within an 8\ifmmode\times\else\texttimes\fi{}8 Kane model and diagonalized exactly for this particular geometry. Energy levels, transition energies, and corresponding oscillator strengths were calculated and compared to the experimental data.