Electrons and holes in InSb under crossed magnetic and stress fields. IV. Stimulated Raman scattering in the valence bands.

Abstract

Anticrossing of magnetic levels in InSb leads to high combined densities of states in the valence band at nonzero values of the longitudinal momentum ${k}_{B}$. Using pump laser radiation with photon energies near the band gap we observed stimulated Raman scattering due to transitions between repelling energy levels under uniaxial deformation. The stress was applied perpendicular to the magnetic field and perpendicular to the wave vector of the incident light (T?[100], B?[001], k?[010]). The energy levels involved in the scattering process could be identified as states with ${k}_{B}$\ensuremath{\ne}0 in the heavy-hole bands 3V (0,-1/2) and 6V (1,1/2). The range of frequency of the Raman radiation and of the magnetic field, where the observation is possible, depends very sensitively on stress. Detailed calculations of the valence-band structure show that the deformation shifts the anticrossing point in ${k}_{B}$ space and varies the energy difference of the levels 3V and 6V.