Electrons and holes in InSb under crossed magnetic and stress fields. I. Theory.

Abstract

In a series of four papers magnetooptical transitions are presented for InSb crystals, which are subjected to uniaxial stress perpendicular to the magnetic field. Here, in the first paper, we establish an 8\ifmmode\times\else\texttimes\fi{}8 k\ensuremath{\cdot}p Hamiltonian matrix for stress T?[100] and field B?[001] and diagonalize it exactly. The dependence of valence and conduction states on stress and longitudinal momentum is discussed and compared with the geometry of parallel fields T?B?[001]. Characteristic features are extracted for inter- and intraband transitions. Under crossed fields, the levels are separated much stronger with stress, yielding more insight than in the parallel configuration.