Abstract
The effect of high-temperature irradiation with 15 MeV protons on the parameters of high-voltage 4H-SiC Schottky diodes has been studied at irradiation temperatures of 23–500 °C and doses in the range from 7 × 1013 to 2 × 1014 cm−2. After the irradiation with a dose of 1014 cm−2 at room temperature, the forward current at a forward voltage U = 2 V decreases by ~10 orders of magnitude. In this case, the cutoff voltage Uc, equal to ~0.6 V in unirradiated devices, decreases to Uc ≈ 0.35 V. By contrast, irradiation with the same dose at a temperature of 500 °C leads to an increase in Uc up to Uc ≈ 0.8 V. At the same reference value of the forward voltage U = 2 V, the decrease in current, compared to the value in unirradiated devices, was smaller by ~4 orders of magnitude. In the entire range of doses and irradiation temperatures under study, the forward current–voltage characteristic of diodes at U > Uc is linear up to U ≤ 2 V.
Published Version
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