Abstract
This work was prepared in two sections; the first section describes how to alloy Schottky diodes and aims to understand how metal alloys affect the essential parameters of Schottky diodes at the metal-semiconductor interface. The second section covers the varying differential depletion length in (Cu% Ni%)/n-Si/Al binary-alloyed Schottky diodes. After collecting data, the characteristics of Schottky diodes are calculated by plotting them with an increasing percentage ratio of the first element. We see that alloyed Schottky diode characteristics significantly depend on the mass percentage ratio of the first element. Significant results are seen: first, Vbi (built-in potential) directly affects the characteristics of Schottky diodes with a turning point occurring at the Vbi point on the axis, and second, the built-in potential plays a key role in Schottky diode characteristics. Estimation of the depletion length depends on the built-in potential. For the forward and reverse bias cases, the depletion length versus voltage graphs are identical, but with their symmetry mirrored. Analyzing the differential depletion lengths, it is easily seen that they have higher or lower values compared to the zero depletion length for the forward and reverse bias cases, respectively. When the depletion length formula is expanded in a series, new equations are obtained to show significant effects on Schottky diode characteristics.
Highlights
It is well known that the metal–semiconductor interface has a very significant effect on the electrical characteristics of diodes
If pure metal is evaporated onto the semiconductor surface in a vacuum medium, thermal electrons move from the semiconductor to the metal, while holes move from the metal to the semiconductor due to the different work functions, and recombination progress occurs at this time
Where LDL0 is the zero bias depletion length, εs is the relative dielectric constant, ε0 is the dielectric constant of space, Vbi is the built-in potential, e is the electron’s charge unit, φM is the work function of the metal, and φS is the affinity of the semiconductor
Summary
It is well known that the metal–semiconductor interface has a very significant effect on the electrical characteristics of diodes. If we alter the mass percentage ratio of the alloy metal in the compound used to obtain the interface, all the Schottky diode parameters will change: the ideality factor ( nIV ) [1], barrier height ( ΦBH ) [1], Cheung functions (Ch1, Ch2) [2], built-in potential ( Vbi) [3], donor density ( ND) [4,5,6], zero bias depletion length (W 0 or L0) [1], interfacial thickness (D it) [1], interface state density ( NSS) [7,8] and effective Fermi level ( EF ) [1,3]. The angle between two lines will be zero for an ideal state in the case of forward bias and reverse bias, i.e. both lines behave as parallel lines like the single line It might represent a characteristic view for Schottky diodes. The percent rate was selected as symmetric in order for the alloy ratio effect of MS Schottky diodes to be understandable
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