Abstract
The effect of contamination with iron on the recombination activity of extended defects in multicrystalline silicon has been studied by the electron-beam-induced current (EBIC) technique. It has been shown that this process does not lead to the appearance of EBIC contrast of the Σ3 and Σ9 grain boundaries. It has been revealed that iron diffusion results in a significant increase in the contrast of dislocations introduced by plastic deformation and of traces behind the dislocations in single-crystal silicon, while the dislocation contrast in multicrystalline silicon remains practically unchanged.
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