Abstract
We investigated behaviors of Fe and Ni at crystalline defects in multi-crystalline silicon by intentional contamination and phosphorus (P) gettering processes. After contaminations, EBIC contrasts became stronger at Σ27 and Random grain boundaries (GBs), and at small-grain boundaries (SA-GBs) with > 1 ° misorientation angles. After P gettering processes, EBIC contrasts recovered as low as those before metal contamination at most GBs and SA-GBs. However, some Σ27, Random GBs and SA-GBs with >1 ° misorientation angle remain high contrast. Defect properties such as boundary orientations or tilt and twist components consisting misorientation angles might affect on the minority carrier recombination.
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