Abstract
The energy-band parameters and the emission and optical properties of SiO2/Si films of different thicknesses prepared by thermal oxidation and ion bombardment are studied. It is shown that the band gap E g of the SiO2/Si film with a thickness of 30–40 A is 8.8–8.9 eV. In the transition layer, the E g value and secondary-electron emission coefficient σm steadily decrease with increasing depth.
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