Abstract
Hydrogenation by plasma is a low cost and efficient method to improve the photovoltaic properties of multicrystalline silicon. The role of plasma parameters on the efficiency of hydrogenation was studied using secondary ion mass spectrometry (SIMS), hydrogen effusion, electrochemical impedance spectroscopy and electron beam induced current (EBIC). The experimental results showed a deuterium concentration of 10 20 atoms cm −3 could be reached in the sample after a 15-min treatment. Optimal treatment time depends on temperature and leads to maximum electrical conductivity and minority carrier diffusion length. The results confirm the reduction of defects densities and potential barriers associated with grain boundaries.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
