Abstract
The optical constants of the Ge 25Sb 15− x Bi x S 60 (0⩽ x⩽15) chalcogenide films, either as-deposited or after being annealed at various temperatures have been computed in the spectral wavelength range 400–2400 nm from the transmittance and reflectance measurements of normally-incident light. With the increase in bismuth content, the optical energy gap (which is indirect) decreases, while the refractive index increases. The effects of film thickness, substrate type, deposition rate and γ-radiation on optical properties have been studied. The effect of thermal annealing on the growth characteristics and stability of the films has been studied using X-ray diffraction and scanning electron microscopy. The dispersion of the refractive index is discussed in terms of the single-oscillator Wemple–DiDomenico model.
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