The application of NiCrPt alloy targets for magnetron sputter deposition: Characterization of targets and deposited thin films

Abstract

NiSi thin films are extensively used in advanced semiconductor devices due to their desirable electrical properties. Recently, the incorporation of platinum (Pt) into NiSi thin films, resulting in NiPtSi, has been pursued to mitigate the agglomeration of NiSi and delay its transformation into NiSi2. Typically, in semiconductor manufacturing, NiPt films are deposited onto silicon wafers through magnetron sputtering using NiPt sputtering targets. To further enhance the properties of these thin films, chromium (Cr) was introduced into the NiPt target. Initially, NiCrPt targets were fabricated through thermal mechanical treatment. Subsequently, NiCrPt thin films were deposited via magnetron sputtering using these NiCrPt targets. The study results indicate that, in comparison to NiPt targets, the addition of chromium offers several advantages: (1) it refines the grain size of NiPt in both bulk and thin film states; (2) it effectively reduces microcracks in the thin films; and (3) it increases the sputtering rate of NiCrPt targets, owing to an increased pass-through flux of 100 % and the refined grain size of the NiCrPt target. These findings provide valuable insights into the design and development of NiPt alloy sputtering targets and the production of crack-free thin films via magnetron sputtering, marking a significant advancement in the field of semiconductor manufacturing.