Design, Fabrication, and Characterization of a 4H-SiC CMOS Readout Circuit for Monolithic Integration with SiC Sensors

Abstract

This paper reports the design and fabrication of a 4H-SiC CMOS readout circuit enabling monolithic integration of silicon carbide (SiC) sensors and circuits. Compared to conventional Si electronics, 4H-SiC integrated circuits can sustain operation in harsh conditions such as higher temperatures and radiation levels. The proposed amplifier performance is well balanced through the temperature range of 25C to 400C. Compared to state-of-the-art, the proposed SiC readout circuit does not include any off-chip components. The amplifier is fully differential, and hence shows improved common-mode rejection and signal-to-noise ratio (SNR). It can be monolithically integrated with SiC sensors in a scalable SiC technology.