Design and simulation of junctionless nanowire tunnel field effect transistor for highly sensitive biosensor

Abstract

This paper investigates symmetrical design of a Junctionless Nanowire Tunnel-Field-Effect-Transistor (JL-NWTFET) for highly sensitive biosensor. JL-NWTFET deployed using Gate-All-Around (GAA) structure and Dielectric-Modulation (DM) technique to detects the bio-logical molecules such as uricase, streptavidin, protein, biotin, uriease, Amino-propyl triethoxysilane (APTS), ChOx etc. The variation in the drain current (ID), subthreshold slope (SS), transconductance (gm), and ION/IOFF ratio considered as the sensitivity parameters of the JL-NWTFET to detect different biological molecules in the cavity area. The cavity area is formed by a layer in between the source-gate oxides and source-gate electrodes. The JL-NWTFET shows the reduced leakage currents in terms of Short-Channel-Effects (SCEs) and superior controllability over the channel. The proposed JL-NWTFET has been designed with uniform doping concentration (1 × 10−19 cm−3), and gate work-function (φgate = 4.8eV). The high sensitivity (∼109) is observed for APTS biomolecule with dielectric constant (K = 3.57).