Comparative Analysis of Nanowire Tunnel Field Effect Transistor for Biosensor Applications

Abstract

Nanowire based devices are most important candidate for future generation application. The unique advantage of Nanowire as a channel material is one dimensional conduction, low subthreshold leakage current as well high electron mobility. Moreover Nanowire posses unique prosperities such as chemical, optical, electrical and mechanical making them suitable for sensor design. Nanowire Tunnel Field Effect Transistor (NW-TFET) has potential bio-sensor applications as ultra-low power highly sensitive sensors alternative to conventional sensors. NW-TFET can offer sharp inverse subthreshold slope (SS) leads to low leakage current. The important working mechanism is band-to-band tunnelling (BTBT) in TFET and their structures are based on gate-all-around (GAA). This paper presents, recent advancements made on process, purpose and properties of NW-TFET and comparison on various NW-TFET structures and their characteristics. Various categories include in this paper are GAA, Junctionless, hetrojunction, charge plasma, doppingless, or in combination with multigate work functions are discussed. The comparative study revealed that HT-JL-DG-NW-TFET outperforms and highly sensitive bio-sensor application and better device performance over other NW-TFET.