Abstract
Highly oriented ZnS thin films have been deposited on Si (100) using a mixture of zinc chloride and thiourea as precursors and a simple and effective electrostatic spray assisted vapor deposition method. XRD analysis indicated that deposited films are highly 100 oriented in contrast to ZnS films deposited on glass substrates, which are known to have a preferred (111) orientation. HRTEM analysis showed the presence of an amorphous interface layer and high degree of orientation, which is attributed to the interaction of the charged precursor with the single crystal substrate under the high electric field.
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