Deposition of cerium oxide films on Si (1 0 0) and glass substrates using the ESAVD method

Abstract

CeO 2 thin films were deposited onto both Si (1 0 0) and glass substrates at a temperature between 400 and 600 °C using electrostatic spray-assisted vapour deposition (ESAVD). A DC voltage, ranging from 5 to 20 kV, was applied between nozzle and substrate. The surface morphology and microstructure of deposited CeO 2 films were characterised using atomic force microscopy (AFM) and high-resolution scanning electron microscopy (HRSEM). The preferred orientation of the CeO 2 films produced on Si (1 0 0) was revealed using both X-ray diffraction and pole figure measurements. Highly textured CeO 2 films were formed epitaxially onto Si (1 0 0) substrates. The orientation relationships between CeO 2 film and Si substrate were 0 0 1 CeO 2 / / 0 0 1 Si and 1 1 1 CeO 2 / / 1 1 1 Si . However, no distinct alignment was observed in the CeO 2 films deposited on glass. The results show that ESAVD is a promising deposition technique to form thin epitaxial CeO 2 buffer layers onto Si (1 0 0), which is essential for the subsequent deposition of other functional oxide films, such as high-temperature superconducting oxides.