Demonstration of first 1050 V, 21.7 m cm2 normally-off 4H-SiC junction field-effect transistor with implanted vertical channel

Abstract

The first demonstration of a normally-off 4H-SiC double-gated, vertical junction field-effect transistor (VJFET) with implanted vertical channel without using epitaxial regrowth is reported. With an 11 µm, 1×1016 cm−3 doped drift layer, over 1000 V VJFETs in the normally-off mode have been fabricated with a specific on-resistance of 21.7 mΩ cm2.