Abstract
This work reports the demonstration of a normally-off 4H-SiC double-gated, vertical junction field-effect transistor (VJFET) with implanted vertical channel without using epitaxial regrowth. With a 30 μm, 1.9x10 15 cm -3 doped drift layer, over 4,300V VJFETs in the normally-off mode have been demonstrated with a specific on-resistance of 40 m Ωcm 2 up to a drain current density of 20A/cm 2 at 4.5V gate bias.
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