1530 V, 16.8 m [middle dot] cm2, 4H-SiC normally-off vertical junction field-effect transistor

Abstract

The fabrication and characterisation of a 4H-SiC double-gated, normally-off vertical junction field-effect transistor (VJFET) without epitaxial regrowth, with an implanted vertical channel, is reported. A blocking voltage of 1530 V in the normally-off mode has been achieved with a drift layer of 15 µm using a two-step junction termination extension. The VJFET shows a low specific on-resistance RON_SP of 16.8 mΩ · cm2.