Demonstration of first 10 kV, 130 m cm2 normally-off 4H-SiC trenched-and-implanted vertical junction field-effect transistor

Abstract

The first demonstration of a trenched-and-implanted normally-off 4H-SiC vertical junction field-effect transistor with a 120 µm, ∼4.9×1014 cm−3 doped drift layer is reported, resulting in a record high blocking voltage VB of 10 400 V and a specific on-resistance (RSP_ON) of 130 mΩ cm2, leading to the highest VB2/RSP_ON of 832 MW/cm2 reported to date for normally-off SiC FETs.