Abstract
DC and low frequency noise measurements are performed in p-channel gate all around (GAA) vertically stacked silicon nanosheets (NS) at room temperature. The key DC parameters such as threshold voltage, low field mobility, access resistance and subthreshold swing are estimated. Preliminary low frequency noise studies reveal that the 1/f noise may be explained in weak to moderate inversion by the carrier number fluctuation mechanism, while in strong inversion the access resistance noise prevails.
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