Abstract
This work reports the impact of gate oxide thickness on flicker noise (1/f) in 45-nm RFSOI NFET devices. In addition, the effect of finger width scaling on 1/f noise parameters is studied in linear region. The dominant source of 1/f noise is also analyzed. It is observed that thin oxide devices show carrier number fluctuation; however, for thick oxide devices, correlated number-mobility govern the noise. Extracted trap densities using 1/f noise show higher volume trap densities in thin oxide devices. Moreover, trap distribution behavior is analyzed using frequency exponent. Further, GLOBALFOUNDRIES PDK is utilized to model 1/f noise behavior of the devices.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
