Abstract
This work reports the impact of gate oxide thickness on flicker noise (1/f) in 45-nm RFSOI NFET devices. In addition, the effect of finger width scaling on 1/f noise parameters is studied in linear region. The dominant source of 1/f noise is also analyzed. It is observed that thin oxide devices show carrier number fluctuation; however, for thick oxide devices, correlated number-mobility govern the noise. Extracted trap densities using 1/f noise show higher volume trap densities in thin oxide devices. Moreover, trap distribution behavior is analyzed using frequency exponent. Further, GLOBALFOUNDRIES PDK is utilized to model 1/f noise behavior of the devices.
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