Abstract
In this work are investigated the DC and low frequency noise room-temperature operation of p-channel gate-all-around (GAA) vertically stacked silicon nanosheets (NS). The key DC parameters are estimated using methodologies which are not affected by the impact of the access resistance. Low frequency noise studies shown that the carrier number fluctuations correlated to the mobility fluctuations mechanism explain the 1/f behavior from weak to moderate inversion. It is also discussed how access resistance can have an affect on the Coulomb scattering coefficient estimation. In strong inversion, the access resistance noise contribution is seen to dominates the total 1/f noise.
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