Abstract
SrTiO3 films were synthesized on Pt/Ti/SiO2/Si multilayer substrates by mirror-confinement-type ECR plasma sputtering without substrate heating. All films were found to be well crystallized at a substrate temperature below 450 K. A low temperature post-annealing of the films by electromagnetic-wave radiation drastically improved the crystallographic and electric properties of Pt/SrTiO3/Pt/Ti/SiO2/Si capacitors. The crystallinity of the films indicated little variation by post-annealing, but irradiation of electromagnetic wave was confirmed to be effective for decreasing the post-annealing time and temperature. The electric properties of films annealed without Pt upper electrodes were better than those with them, and the film dielectric constant reached a value of 260, which is nearly equal to thebulk one, at an annealing temperature of 573 K.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
