Abstract
Bi12SiO20 thin films have been prepared on glass and (0001) sapphire substrates by ECR plasma sputtering with a Bi and Si multitarget system. Polycrystalline thin films of δ-phase Bi12SiO20 have been obtained without any substrate heating. These films can be transformed into γ-phase Bi12SiO20 by heat treatment above 400°C in air and show a large photoconductivity in the range of 380-460 nm. Epitaxial thin films of γ-phase Bi12SiO20 have been obtained on (0001) sapphire substrates at the substrate temperature of 600°C during the sputtering process. Excellent quadratic electrooptic effects for these epitaxial thin films are successfully observed for the first time, and a spatial light modulator using this γ-phase Bi12SiO20 thin film has also been demonstrated. The details of the preparation, structure and some electrical and electrooptic properties of the Bi12SiO20 thin films are described.
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