Abstract
Bi12SiO20 thin films have been prepared on glass and (0001) sapphire substrates by ECR plasma sputtering with a Bi and Si multitarget system. Polycrystalline thin films of δ-phase Bi12SiO20 have been obtained without any substrate heating. These films can be transformed into γ-phase Bi12SiO20 by heat treatment above 400°C in air and show a large photoconductivity in the range of 380-460 nm. Epitaxial thin films of γ-phase Bi12SiO20 have been obtained on (0001) sapphire substrates at the substrate temperature of 600°C during the sputtering process. Excellent quadratic electrooptic effects for these epitaxial thin films are successfully observed for the first time, and a spatial light modulator using this γ-phase Bi12SiO20 thin film has also been demonstrated. The details of the preparation, structure and some electrical and electrooptic properties of the Bi12SiO20 thin films are described.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.