Abstract
Bismuth‐silicon‐oxide (BSO) thin films have been prepared on glass substrates by ECR plasma sputtering with Bi and Si multi targets systems. The polycrystalline thin films of δ‐phase BSO have been obtained without any substrate heating, ≦ 150°C, and these films can be transformed into γ‐phase BSO by heat‐treatment above 400°C in air. Some γ‐phase BSO thin films show a large photoconductivity in the range of 380–460 nm. This large photoconductivity of BSO thin films deposited on glass substrates is the first experimental result to our knowledge. The details of the preparation, structure, and some electrical properties of the BSO thin films are described in this paper.
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