Abstract
Bi12SiO20 thin films have been prepared on (0001) sapphire substrates by electron cyclotron resonance plasma sputtering with a Bi and Si multitarget system. The epitaxial thin films of γ-phase Bi12SiO20 have been obtained at the substrate temperature of 600 °C during the sputtering process. Excellent quadratic electro-optic effects for these epitaxial thin films were successfully observed for the first time. The details of the preparation, structure, and electro-optic properties of the Bi12SiO20 thin films are precisely described.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
