Abstract
Ionized cluster beam deposition (ICBD) has been employed to fabricate high-purity polyimide (PI) films. Pyromellitic dianhydride and oxydianiline were deposited using dual ionized cluster beam (ICB) sources. X-ray photo-electron spectroscopy shows that the chemical properties of the surface are very sensitive to the ICBD conditions such as cluster ion acceleration voltage and ionization voltage. At optimum ICBD conditions, the PI films have maximum imidization, and negligible impurities (∼ 1% isoimide). A metal-insulator-semiconductor device has been fabricated using PI as an insulator to investigate the interfacial properties. From C− V characteristics, the PI film deposited with ICB is found to have a fairly low interface trap density. The conduction mechanism in ion implanted PI film is described in terms of the conducting grain model. The main factor determining the conductivity in PI is found to be closely related to the deposited damage energy induced by ion irradiation.
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