Abstract
Ionized cluster beam deposition (ICBD) has been employed to fabricate high-purity crystalline polyimide (PI) thin films. X-ray photoemission spectroscopy, transmission electron microscopy, glancing-incidence X-ray diffraction, and atomic force microscopy studies show that the structure and properties of PI films are very sensitive to the deposition conditions such as the cluster acceleration voltage (V a) and the ionization voltage (V e). At optimum conditions of V a = 800 V and V e = 200 V, the PI films have a maximum imidization, negligible amount of impurity (∼1% of isoimide), and a good crystalline structure probably due to the high surface migration energy, and the surface cleaning effect. It was also found that the surface morphology and the adhesion properties could be improved by ICBD.
Published Version
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