Characteristics of In 0.52Al 0.48As/In xGa 1− xAs HEMT’s with various In xGa 1− xAs channels

Abstract

High-linearity In 0.52Al 0.48As/In x Ga 1− x As HEMT’s have been successfully fabricated by low-pressure metal organic chemical vapor deposition (LP-MOCVD). The studied devices exhibit high transconductance, low leakage current, high breakdown, and high-linearly operational regime due to good carrier confinement well as the low temperature growth In 0.52Al 0.48As barrier layer significantly suppresses buffer leakage current. Experimentally, linear operation current regime and gate voltage swing are improved in the structure utilizing a compositionally graded In x Ga 1− x As channel due to the compositionally graded In x Ga 1− x As channel enhance the device carrier mobility and confinement. An extrinsic transconductance as high as 302 mS/mm at gate length of 1.5 μm is achieved for the In 0.6Ga 0.4As channel structure.