Abstract
It was found that the lattice constant in Zn-doped InGaAIP, grown at 730°C substrate temperature by low-pressure (25 Torr) metalorganic chemical vapor deposition using dimethylzinc as a Zn dopant source, decreases significantly, compared with that in undoped InGaAIP, while the Zn-doped layer and the undoped layer have been grown at the same molar flow-rate ratio of group-III sources. The lattice constant shift increases in proportion to the Zn concentration in Zn-doped InGaAIP. The growth rate for Zn-doped InGaAIP decreases in proportion to the lattice constant shift. From these results, it is concluded that the lattice constant shift in Zn-doped InGaAIP is caused by a relative decrease in In incorporation.
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